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  • SICTECH MHD silicon carbide kudziyisa element inotora yazvino kupisa tekinoroji kuChina nekune dzimwe nyika. Iyo yakanyanya tembiricha inogona kusvika 1625 degrees Celsius. Iyo ine yakakwira density uye yakaderera porosity. Iyo inogona kunyatso kudzivisa kukukurwa kweanokuvadza magasi, mvura mhute uye simbi oxides. Kukwegura kumhanya, kushandisa nguva yakareba, kuderedzwa kutsiva frequency, kudzikisa mutengo wekugadzira kune vashandisi, inokodzera nzvimbo dzinonetsa senge girazi, zvemagetsi uye zvakakosha simbi zvinhu.
    Huanneng SICTECH silicon carbide yekudziya element inogona kupa akasiyana siyana ekupisa muviri zvinhu uye zvivakwa, mhango tubular kudziyisa zvinhu, solid solid element, spiral kudziyisa zvinhu, uye inogona kugadzirwa zvinoenderana nevatengi zvinodiwa. SICTECH silicon carbide yekudziya element inogona zvakare kupa akasiyana siyana ekushongedzwa kwepamusoro maererano nenzvimbo dzakasiyana dzekugadzirwa kwechoto; inogona kudzvinyirira magasi asina kugadzikana senge mvura mhute, nitrogen, hydrogen, alkaline magasi, simbi oxides, nezvimwewo, zvichinyatso kudzikisira kukukurwa kwesilicon carbide kudziyisa chinhu neanokuvadza mweya volatiles.

    Hunhu hwepanyama

       

    Hunhu Zvinhu

    Chikwata

    Type

    GD / U / W.

    HGD

    LS / LD

    Kufungidzira Kuwanda

    3.2

    3.2

    3.1

    Kuwanda kwehuwandu

    2.5

    2.58

    2.8

    Zviripachena Kusaziva

    %

    23

    20

    5

    Kukotama Simba

    MPa pa25 ℃

    50

    60

    98

    Chaicho Kupisa

    kj / kg + ℃ pa25 ℃ -1300 ℃

    1.0

    1.0

    1.0

    Kupisa Kunopisa

    W / m + ℃ pa1000 ℃

    12-18

    14-19

    16-21

    Chezita Nemishonga

    Ω cm pa1000 ℃

    0.08

    0.1

    0.016

    Coefficient of Thermal Kuwedzera

    1000 ℃ (X 10-6 / ℃)

    4.5

    4.5

    4.5